(a) The SEM image of the fabricated Si disk on a glass slip. (b) The simulated magnitude of the magnetic field profile of the incident APB without Si disk, and (c) in presence of the Si disk, both observed in a transverse cross section 5 nm above the disk upper boundary. (d) Preliminary result of a force map of the Si disk exposed to the incident APB measured by PiFM. Force is proportional to the magnitude square of the illuminating electric field [8]. (e) Simulated magnitude of the electric field profile of the incident APB without the presence of the Si disk, and (f) in presence of the Si disk, still observed in a transverse cross section 5 nm above the disk upper boundary.